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| PSMN011-60ML_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33 | |||
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NXP Semiconductors
PSMN011-60ML
N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33
Symbol
Parameter
Tsld(M)
peak soldering temperature
Source-drain diode
IS
source current
ISM
peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tmb = 25 °C
[1]
pulsed; tp ⤠10 µs; Tmb = 25 °C
VGS = 10 V; Tj(init) = 25 °C; ID = 61 A;
Vsup ⤠60 V; RGS = 50 Ω; unclamped;
Fig. 3
[1] Continuous current is limited by package
80
ID
(A)
60
003aak897
120
Pder
(%)
80
Min Max Unit
-
260 °C
-
70
A
-
242 A
-
48.5 mJ
03na19
40
40
20
0
0
50
100
150
200
Tj (°C)
Fig. 1. Continuous drain current as a function of
mounting base temperature
0
0
50
100
150
200
Tmb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN011-60ML
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 June 2013
© NXP B.V. 2013. All rights reserved
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