PHT4NQ10LT Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PHT4NQ10LT
N-channel enhancement mode field-effect transistor
10
IS
(A)
9
VGS = 0 V
8
03ac89
7
6
5
4
3
150ºC
Tj = 25ºC
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
VSD (V)
T_j = 25 °C and 150 °C; V_GS = 0 V
Fig 14. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
10
VGS
(V) ⁹
8
ID = 3.5 A
Tj = 25 ºC
03ac91
7
6
5
VDS = 20 V
VDS= 80 V
4
3
2
1
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
QG (nC)
I_D = 3.5 A; V_DS = 80 V
Fig 15. Gate-source voltage as a function of gate
charge; typical values.
9397 750 07342
Product specification
Rev. 01 — 11 September 2000
© Philips Electronics N.V. 2000. All rights reserved.
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