PHT4NQ10LT Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PHT4NQ10LT
N-channel enhancement mode field-effect transistor
10
ID
(A)
9
8
Tj = 25ºC
03ac85
VGS = 5V
7
3V
6
2.8V
5
4
2.6V
3
2.4V
2
1
2.2V
2V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS (V)
10
ID
(A)
9
8
VDS > ID X RDSon
7
6
5
4
3
150ºC
2
1
0
0 0.5 1 1.5 2
03ac87
Tj = 25ºC
2.5 3 3.5 4
VGS (V)
T_j = 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 150 °C; V_DS > I_D × R_DSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
1
RDSon
(Ω)
0.9
0.8
0.7
2V 2.2V
2.4V
0.6
0.5
0.4
0.3
0.2
0.1
0
0123
2.6V
45
03ac86
Tj = 25ºC
2.8V _3V
VGS = 5V
6 7 8 9 10
ID (A)
T_j = 25 °C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values.
3
a _2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20
03aa29
60 100 140 180
Tj (oC)
a = -------^R----^D----^S--^o---ⁿ-------
R
D S o n ( 25 ^°C )
Fig 9. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07342
Product specification
Rev. 01 — 11 September 2000
© Philips Electronics N.V. 2000. All rights reserved.
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