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PHT4NQ10LT Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor | |||
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Philips Semiconductors
PHT4NQ10LT
N-channel enhancement mode ï¬eld-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise speciï¬ed
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = â55 °C
ID = 1 mA; VDS = VGS; Figure 10
Tj = 25 °C
Tj = 150 °C
Tj = â55 °C
VDS = 100 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±10 V; VDS = 0 V
VGS = 5 V; ID = 1.75 A; Figure 8 and 9
Tj = 25 °C
Tj = 150 °C
gfs
forward transconductance
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
turn-on rise time
td(off)
turn-off delay time
tf
turn-off fall time
Source-drain diode
VDS = 5 V; ID = 3.5 A; Figure 12
ID = 3.5 A; VDS = 80 V; VGS = 5 V; Figure 15
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 13
VDD = 50 V; RD = 15 â¦; VGS = 5 V; RG = 6 â¦
VSD
source-drain (diode forward) voltage IS = 3.5 A; VGS = 0 V; Figure 14
trr
reverse recovery time
Qr
recovered charge
IS = 3.5 A; dIS/dt = â100 A/µs;
VGS = 0 V; VDS = 30 V
Min Typ Max Unit
100 130 â V
89 â â V
1â
0.6 â
ââ
2V
âV
2.3 V
â 1 25 µA
â 4 250 µA
â 10 100 nA
â 200 250 mâ¦
â â 575 mâ¦
â 8.5 â S
â 12.2 â nC
â 1.1 â nC
â 3.6 â nC
â 374 â pF
â 45 â pF
â 24 â pF
â 4 â ns
â 10 â ns
â 52 â ns
â 21 â ns
â 0.87 1.5 V
â 50 â ns
â 100 â nC
9397 750 07342
Product speciï¬cation
Rev. 01 â 11 September 2000
© Philips Electronics N.V. 2000. All rights reserved.
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