PHT4NQ10LT Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PHT4NQ10LT
N-channel enhancement mode field-effect transistor
2.5
VGS(th)
(V)
max
2
typ
1.5
min
1
03aa33
10-1
ID
(A) 10-2
10-3
10-4
03aa36
min _{typ max}
0.5
10-5
0
-60 -20 20
60 100 140 180
Tj (oC)
I_D = 1 mA; V_DS = V_GS
Fig 10. Gate-source threshold voltage as a function of
junction temperature.
10-6
0
0.5
1
1.5
2
2.5
3
VGS (V)
T_j = 25 °C; V_DS = 5 V
Fig 11. Sub-threshold drain current as a function of
gate-source voltage.
13
gfs 12
(S) ₁₁
VDS > ID X RDSon
10
9
8
7
6
5
4
3
2
1
0
01234
03ac88
Tj = 25ºC
150ºC
5 6 7 8 9 10
ID (A)
T_j = 25 °C and 150 °C; V_DS > I_D × R_DSon
Fig 12. Forward transconductance as a function of
drain current; typical values.
103
Ciss,
Coss,
Crss
(pF)
102
03ac90
Ciss
Coss
10
10-1
1
Crss
10 _{VDS (V)} 102
V_GS = 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 07342
Product specification
Rev. 01 — 11 September 2000
© Philips Electronics N.V. 2000. All rights reserved.
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