PHT4NQ10LT Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

PHT4NQ10LT
N-channel enhancement mode field-effect transistor
M3D087
Rev. 01 — 11 September 2000
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™¹ technology.
Product availability:
PHT4NQ10LT in SOT223.
2. Features
s TrenchMOS™ technology
s Fast switching
s Low on-state resistance
s Surface mount package
s Logic level compatible.
3. Applications
s Primary side switch in DC to DC convertors
c
c
s High speed driver
s Fast general purpose switch.
4. Pinning information
Table 1: Pinning - SOT223, simplified outline and symbol
Pin
Description
Simplified outline
1
gate (g)
4
2
drain (d)
3
source (s)
4
drain (d)
1
Top view
2
3
MSB002 - 1
SOT223
Symbol
d
g
MBB076
s
1. TrenchMOS is a trademark of Royal Philips Electronics