PHP32N06L Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel enhancement mode field effect transistor

Philips Semiconductors
PHP32N06LT; PHB32N06LT
N-channel enhancement mode field effect transistor
40
I_S ^VGS ^{= 0 V}
(A)
30
20
10
175 ºC
03ah52
T_j = 25 ºC
10
V_GS
(V)
8
I_D = 20 A
T_j = 25 ºC
6
V_DD = 14 V
4
2
03ah54
V_DD = 44 V
0
0
0.3
0.6
0.9
1.2
V_SD (V)
0
0
10
20
30 _{QG (nC)} 40
T_j = 25 °C and 175 °C; V_GS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
T_j = 25 °C; I_D = 20 A
Fig 13. Gate-source voltage as a function of turn-on
gate charge; typical values.
9397 750 09024
Product data
Rev. 01 — 06 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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