PHP32N06L Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel enhancement mode field effect transistor

Philips Semiconductors
PHP32N06LT; PHB32N06LT
N-channel enhancement mode field effect transistor
Table 5: Characteristics…continued
T_j = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Source-drain diode
V_SD
source-drain (diode forward) voltage I_S = 25 A; V_GS = 0 V; Figure 12
t_rr
reverse recovery time
Q_r
recovered charge
I_S = 20 A; dI_S/dt = −100 A/µs
V_GS = −10 V; V_DS = 30 V
Min Typ Max Unit
-
1 1.2 V
-
36 -
ns
-
70 -
nC
40
I_D ^{Tj = 25 ºC}
(A)
30
10 V 5 V 4 V
03ah49
3.5 V
40
I_D ^VDS ^{> I}D ^{x R}DSon
(A)
30
03ah51
20
3V
20
10
V_GS = 2.5 V
0
0
0.5
1
1.5
2
V_DS (V)
10
0
0
175 ºC
1
2
T_j = 25 ºC
3
4
V_GS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 175 °C; V_DS > I_D x R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0.05
03ah50
2
T_j = 25 ºC
V_GS = 3.5 V
a
R_DSon
(Ω)
1.6
0.04
4V
1.2
5V
0.8
0.03
10 V
0.4
03af18
0.02
0
10
20
30
40
I_D (A)
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
T_j (ºC)
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 09024
Product data
Rev. 01 — 06 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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