PHP32N06L Datasheet, PDF (2/13 Pages) NXP Semiconductors – N-channel enhancement mode field effect transistor

Philips Semiconductors
PHP32N06LT; PHB32N06LT
N-channel enhancement mode field effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
V_DS
I_D
P_tot
T_j
R_DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
T_mb = 25 °C; V_GS = 5 V
T_mb = 25 °C
T_j = 25 °C; V_GS = 5 V; I_D = 20 A
T_j = 25 °C; V_GS = 4.5 V; I_D = 20 A
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
V_GSM
I_D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
non-repetitive gate-source voltage
drain current (DC)
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
operating junction temperature
Source-drain diode
R_GS = 20 kΩ
t_p ≤ 50 µs
T_mb = 25 °C; V_GS = 5 V; Figure 2 and 3
T_mb = 100 °C; V_GS = 5 V; Figure 2
T_mb = 25 °C; pulsed; t_p ≤ 10 µs; Figure 3
T_mb = 25 °C; Figure 1
I_S
reverse drain current (DC)
I_SM
pulsed reverse drain current
Avalanche ruggedness
T_mb = 25 °C
T_mb = 25 °C; pulsed; t_p ≤ 10 µs
W_DSS non-repetitive avalanche energy
unclamped inductive load; I_D = 20 A;
t_p = 0.11 ms; V_DS ≤ 25 V; V_GS = 5 V;
R_GS = 50 Ω; starting T_j = 25 °C
Typ
Max Unit
-
60
V
-
34
A
-
97
W
-
175
°C
30
40
mΩ
-
43
mΩ
Min
Max Unit
-
60
V
-
60
V
-
±15
V
-
±20
V
-
34
A
-
24
A
-
136
A
-
97
W
−55
+175 °C
−55
+175 °C
-
34
A
-
136
A
-
100
mJ
9397 750 09024
Product data
Rev. 01 — 06 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
2 of 13