PHP32N06L Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel enhancement mode field effect transistor

Philips Semiconductors
PHP32N06LT; PHB32N06LT
N-channel enhancement mode field effect transistor
8. Characteristics
Table 5: Characteristics
T_j = 25 °C unless otherwise specified
Symbol Parameter
Static characteristics
V_(BR)DSS drain-source breakdown voltage
V_GS(th) gate-source threshold voltage
I_DSS
drain-source leakage current
I_GSS
R_DSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
Q_g(tot) total gate charge
Q_gs
gate-source charge
Q_gd
gate-drain (Miller) charge
C_iss
input capacitance
C_oss
output capacitance
C_rss
reverse transfer capacitance
t_d(on)
turn-on delay time
t_r
rise time
t_d(off)
turn-off delay time
t_f
fall time
Conditions
Min Typ Max Unit
I_D = 0.25 mA; V_GS = 0 V
T_j = 25 °C
T_j = −55 °C
I_D = 1 mA; V_DS = V_GS; Figure 9
T_j = 25 °C
T_j = 175 °C
T_j = −55 °C
V_DS = 60 V; V_GS = 0 V
T_j = 25 °C
T_j = 175 °C
V_GS = ±10 V; V_DS = 0 V
V_GS = 5 V; I_D = 20 A; Figure 7 and 8
T_j = 25 °C
T_j = 175 °C
V_GS = 4.5 V; I_D = 20 A;
V_GS = 10 V; I_D = 20 A;
60 -
-
V
55 -
-
V
1 1.5 2 V
0.5 -
-
V
-
-
2.3 V
-
0.05 10 µA
-
-
500 µA
-
2 100 nA
-
30 40 mΩ
-
-
84 mΩ
-
31.5 43 mΩ
-
26 37 mΩ
I_D = 20 A; V_DD = 44 V; V_GS = 5 V; Figure 13
-
-
-
V_GS = 0 V; V_DS = 25 V; f = 1 MHz; Figure 11
-
-
-
V_DS = 30 V; R_L = 1.2 Ω; V_GS = 5 V; R_G = 10 Ω; -
-
-
-
17 -
nC
3-
nC
8.5 -
nC
920 1280 pF
160 200 pF
100 155 pF
14 -
ns
120 -
ns
45 -
ns
55 -
ns
9397 750 09024
Product data
Rev. 01 — 06 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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