PHP32N06L Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel enhancement mode field effect transistor

Philips Semiconductors
PHP32N06LT; PHB32N06LT
N-channel enhancement mode field effect transistor
2.5
V_GS(th)
(V)
2
1.5
1
max
03aa33
typ
min
10-1
I_D
03aa36
(A)
10-2
10-3
min typ max
10-4
0.5
10-5
0
-60
0
60
120
180
T_j (^oC)
10-6
0
0.5
1
1.5
2
2.5
3
V_GS (V)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
T_j = 25 °C; V_DS = V_GS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
104
C
(pF)
103
102
03ah53
C_iss
C_oss
C_rss
10
10-1
1
10
102
V_DS (V)
V_GS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 09024
Product data
Rev. 01 — 06 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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