PHN205 Datasheet, PDF (8/12 Pages) NXP Semiconductors – Dual N-channel enhancement mode MOS transistor

Philips Semiconductors
Dual N-channel enhancement mode
MOS transistor
Product specification
PHN205
handbook,¹h⁶alfpage
IS
(A)
12
8
MGG347
(1) (2)
(3)
10³
handbook, halfpage
RDSon
(mΩ)
(1)
(2)
(3)
(4)
(5)
10²
MGG348
4
0
0
0.4
0.8 _{VSD (V)} 1.2
V_GD = 0.
(1) T_amb = 150 °C; t_p = 300 µs; δ = 0.
(2) T_amb= 25 °C; t_p = 300 µs; δ = 0.
(3) T_amb= −65 °C; t_p = 300 µs; δ = 0.
Fig.10 Source current as a function of source-drain
diode forward voltage; typical values.
10
0
2
4
6
T_amb = 25 °C; t_p = 300 µs; δ = 0.
V_DS ≥ I_D × R_DSon.
(2) I_D = 1.6 A.
(1) I_D = 0.5 A.
(3) I_D = 3.2A.
8
10
VGS (V)
(4) I_D = 6.4 A.
(5) I_D = 10 A.
Fig.11 Drain-source on-state resistance as a
function of gate-source voltage;
typical values.
handbook¹, ^.h³alfpage
k
1.2
MGG349
1.1
1
0.9
0.8
0.7
−100 −50
0
k = -V----_G^V----_SG---_t-^Sh---^t--^h_{a---t--a--2-t--5--T--°}--^j-C---
V_GSth at V_DS = V_GS; I_D = 1 mA.
50
100
150
Tj (°C)
Fig.12 Temperature coefficient of gate-source
threshold voltage as a function of junction
temperature; typical values.
2
handbook, halfpage
k
1.5
1
MGG359
(1)
(2)
0.5
0
−100 −50
0
50
k = _R-----D-R---_S-^D--_o--^S-_n--^o--a-ⁿ---t--a-2--t-5---T---_°-^j--C---
(1) R_DSon at V_GS = 10 V; I_D = 3.2 A.
(2) R_DSon at V_GS = 4.5 V; I_D = 1.6 A.
100
150
Tj (°C)
Fig.13 Temperature coefficient of drain-source
on-resistance as a function of junction
temperature; typical values.
1997 Oct 22
8