PHN205 Datasheet, PDF (5/12 Pages) NXP Semiconductors – Dual N-channel enhancement mode MOS transistor

Philips Semiconductors
Dual N-channel enhancement mode
MOS transistor
Product specification
PHN205
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per N-channel
V_(BR)DSS
V_GSth
I_DSS
I_GSS
R_DSon
C_iss
C_oss
C_rss
Q_G
Q_GS
Q_GD
t_d(on)
t_f
t_on
t_d(off)
t_r
t_off
drain-source breakdown voltage V_GS = 0; I_D = 10 µA
30
gate-source threshold voltage V_GS = V_DS; I_D = 1 mA
1
drain-source leakage current
V_GS = 0; V_DS = 24 V
−
gate leakage current
V_GS = ±20 V; V_DS = 0
−
drain-source on-state resistance V_GS = 4.5 V; I_D = 1.6 A
−
V_GS = 10 V; I_D = 3.2 A
−
input capacitance
V_GS = 0; V_DS = 24 V; f = 1 MHz
−
output capacitance
V_GS = 0; V_DS = 24 V; f = 1 MHz
−
reverse transfer capacitance
V_GS = 0; V_DS = 24 V; f = 1 MHz
−
total gate charge
V_GS = 10 V; V_DD = 15 V; I_D = 3.2 A −
gate-source charge
V_GS = 10 V; V_DD = 15 V; I_D = 3.2 A −
gate-drain charge
V_GS = 10 V; V_DD = 15 V; I_D = 3.2 A −
turn-on delay time
V_GS = 0 to 10 V; V_DD = 15 V;
−
I_D = 1 A; R_gen = 6 Ω; see Fig.4
fall time
V_GS = 0 to 10 V; V_DD = 15 V;
−
I_D = 1 A; R_gen = 6 Ω; see Fig.4
turn-on switching time
V_GS = 0 to 10 V; V_DD = 15 V;
−
I_D = 1 A; R_gen = 6 Ω; see Fig.4
turn-off delay time
V_GS = 10 to 0 V; V_DD = 15 V;
−
I_D = 1 A; R_gen = 6 Ω; see Fig.4
rise time
V_GS = 10 to 0 V; V_DD = 15 V;
−
I_D = 1 A; R_gen = 6 Ω; see Fig.4
turn-off switching time
V_GS = 10 to 0 V; V_DD = 15 V;
−
I_D = 1 A; R_gen = 6 Ω; see Fig.4
Source-drain diode
V_SD
source-drain diode forward
V_GD = 0; I_S = 1.25 A
−
voltage
t_rr
reverse recovery time
I_S = 1.25 A; di/dt = −100 A/µs
−
−
−
V
−
2.8 V
−
100 nA
−
±100 nA
−
0.1 Ω
−
0.05 Ω
450 −
pF
200 −
pF
100 −
pF
15 −
nC
1
−
nC
5
−
nC
7
−
ns
8
−
ns
15 −
ns
20 −
ns
12 −
ns
32 −
ns
−
1
V
45 −
ns
1997 Oct 22
5