BUK7775-55A Datasheet, PDF (8/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
BUK7775-55A
N-channel TrenchMOS™ standard level FET
25
03ne10
ID
(A)
20
15
10
5
Tj = 150 ^OC
Tj = 25 ^OC
0
0
2
4
6
8
10
VGS (V)
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
10
VGS
(V) ₉
8
VDD= 14 V
7
6
5
4
3
2
1
0
0
5
03nc05
VDD= 44 V
10 _{QG (nC)} 15
T_j = 25 °C; I_D = 10 A
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
120
IS
(A)
100
03ne11
80
60
40
Tj = 150 ^OC
Tj = 25 ^OC
20
0
0.0
0.5
1.0
1.5
2.0
VSD (V)
V_GS = 0 V
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
9397 750 13325
Product data
Rev. 02 — 7 June 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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