BUK7775-55A Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK7775-55A
N-channel TrenchMOS™ standard level FET
Rev. 02 — 7 June 2004
M3D308
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™¹ technology, featuring very low on-state resistance.
Product availability:
BUK7775-55A in SOT186A (TO-220F).
2. Features
s TrenchMOS™ technology
s Q101 compliant
s 150 °C rated
s Standard level compatible.
3. Applications
s Automotive and general purpose power switching:
x 12 V and 24 V loads
x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT186A, simplified outline and symbol
Pin
Description
Simplified outline
1
gate (g)
mb
2
drain (d)
3
source (s)
mb
mounting base;
isolated
1 2 3 _MBK110
SOT186A (TO-220F)
Symbol
d
g
mbb076
s
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.