BUK7775-55A Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
BUK7775-55A
N-channel TrenchMOS™ standard level FET
120
Pder
(%)
100
03ne36
80
60
40
20
0
0 25 50 75 100 125 150 175
Tmb (oC)
P_der
=
-------^P----^t--^o--^t-------
P
×
100
%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
120
Ider
(%)₁₀₀
03ne37
80
60
40
20
0
0 25 50 75 100 125 150 175
Tmb (oC)
V_GS ≥ 10 V
I_der
=
-------^I---^D--------
I
× 100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
102
ID
(A)
10
limit RDSon = VDS/ ID
1
DC
03ne03
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
10-1
1
10
VDS (V)
102
T_mb = 25 °C; I_DM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 13325
Product data
Rev. 02 — 7 June 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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