BUK7775-55A Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
BUK7775-55A
N-channel TrenchMOS™ standard level FET
60
03nc09
ID
VGS (V) = 16 14
(A)
20
50
12
40
10.5
9.5
30
8.5
7.5
20
6.5
10
5.5
0
4.5
0
2
4
6
8
10
VDS (V)
160
RDSon
(mΩ)
140
120
100
80
60
40
5
03nc08
10
15 _{VGS (V)} 20
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 10 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
180
RDSon
(mΩ)
160
5.5 6 6.5 ⁷
140
120
100
80
60
40
0
10
20
T_j = 25 °C
03nc10
8 VGS (V) =10
30
40
50
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
2.2
a
2
03nc24
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20 60 100 140 180
Tj (oC)
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain source on-state resistance
factor as a function of junction temperature.
9397 750 13325
Product data
Rev. 02 — 7 June 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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