BUK7775-55A Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
BUK7775-55A
N-channel TrenchMOS™ standard level FET
5
V_GS(th)
(V)
4
3
max
typ
03aa32
10^-1
I_D
(A)
10^-2
10^-3
03aa35
min typ max
2
min
10^-4
1
10^-5
0
-60
0
60
120
180
T_j (°C)
10^-6
0
2
4
6
V_GS (V)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
T_j = 25 °C; V_DS = V_GS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
8
03nc06
600
03nc11
gfs
C (pF)
(S)
500
6
400
4
300
Ciss
2
0
0
5
10
15
20
25
ID (A)
T_j = 25 °C; V_DS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
200
100
0
10-2
10-1
1
Coss
Crss
10
102
VDS (V)
V_GS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 13325
Product data
Rev. 02 — 7 June 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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