BUK7628-100A_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7628-100A
N-channel TrenchMOS standard level FET
5
V_GS(th)
(V)
4
maximum
003aaf163
10^−1
I_D
(A)
10^−2
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3
typical
2
minimum
10^−3
10^−4
2%
typical 98 %
1
10^−5
0
−100
0
100
200
T_j (°C)
I_D = 1 mA; V_DS = V_GS
Fig 13. Gate-source threshold voltage as a function of
junction temperature
10^−6
0
1
2
3
4
5
V_GS (V)
T_j = 25 °C; V_DS = V_GS
Fig 14. Sub-threshold drain current as a function of
gate-source voltage
5
C
C_iss
(nF)
4
3 Coss
003aaf165
10
V_GS
(V)
8
6
003aaf166
V_DD = 14 V
V_DD = 44 V
2 C_rss
4
1
2
0
10^−2
10^−1
1
10
10²
V_DS (V)
V_GS = 0 V; f = 1 MHz
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
0
0
50
100
150
Q_G (nC)
T_j = 25 °C; I_D = 25 A
Fig 16. Gate-source voltage as a function of gate
charge; typical values
100
I_F
(A)
80
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60
T_j = 175 °C
T_j = 25 °C
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SDS (V)
V_GS = 0 V
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
BUK7628-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 April 2011
© NXP B.V. 2011. All rights reserved.
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