BUK7628-100A_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7628-100A
N-channel TrenchMOS standard level FET
200
I_D
(A)
160
120
V_{GS (V)} = 20
13.5
10.0
9.0
8.0
7.5
80
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7.0
6.5
6.0
5.5
40
5.0
0
4.5
0
2
4
6
8
10
V_DS (V)
T_j = 25 °C
Fig 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
65
R_DS(on)
(mΩ)
55
45
35
5.5
6.0
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6.5
7.0
7.5
8.0
25
V_GS (V) = 10
15
5
45
85
125
I_D (A)
T_j = 25 °C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
31
R_DS(on)
(mΩ)
27
23
19
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100
I_D
(A)
80
60
40
20
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T_j = 175 °C T_j = 25 °C
15
5
7
9
11
13
15
V_GS (V)
T_j = 25 °C; I_D = 25 A
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
0
0
2
4
6
8
V_GS (V)
V_DS > I_D x R_DSon
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
50
g_fs
(S)
40
30
20
10
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2.0
a
1.5
1.0
0.5
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0
0
20
40
60
80
100
I_D (A)
V_DS > I_D x R_DSon
0
−100
0
100
200
T_j (°C)
Fig 11. Forward transconductance as a function of
drain current; typical values
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7628-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 April 2011
© NXP B.V. 2011. All rights reserved.
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