BUK7628-100A_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK7628-100A
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Low conduction losses due to low
on-state resistance
1.3 Applications
„ Automotive and general purpose
power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
V_DS
drain-source voltage
I_D
drain current
P_tot
total power dissipation
Static characteristics
R_DSon
drain-source on-state
resistance
Avalanche ruggedness
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
T_mb = 25 °C
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C
I_D = 30 A; V_sup ≤ 25 V;
R_GS = 50 Ω; V_GS = 5 V;
T_j(init) = 25 °C; unclamped
Min Typ Max Unit
-
-
100 V
-
-
47 A
- - 166 W
-
20 28 mΩ
-
-
45 mJ