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| BUK7628-100A_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK7628-100A
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
drain leakage current
IGSS
gate leakage current
RDSon
drain-source on-state
resistance
Dynamic characteristics
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
td(off)
tf
LD
rise time
turn-off delay time
fall time
internal drain
inductance
LS
internal source
inductance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 175 °C
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C
VDS = 30 V; RL = 1.2 â¦; VGS = 10 V;
RG(ext) 10 â¦; Tj = 25 °C
VDS = 30 V; RL = 1.2 â¦; VGS = 10 V;
RG(ext) = 10 â¦; Tj = 25 °C
from upper edge of drain tab to centre of
die; Tj = 25 °C
from drain lead 6 mm from package to
centre of die; Tj = 25 °C
from source lead to source bond pad;
Tj = 25 °C
IS = 25 A; VGS = 0 V; Tj = 25 °C
IS = 47 A; VGS = 0 V; Tj = 25 °C
IS = 47 A; dIS/dt = -100 A/µs;
VGS = -10 V; VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
100 -
-
V
89 -
-
V
2
3
4
V
-
-
4.4 V
1
-
-
V
-
-
500 µA
-
0.05 10 µA
-
2
100 nA
-
2
100 nA
-
-
76 mâ¦
-
20
28
mâ¦
-
2320 3100 pF
-
315 378 pF
-
187 256 pF
-
15
23
ns
-
70
105 ns
-
83
116 ns
-
45
63
ns
-
2.5 -
nH
-
4.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
1.1 -
V
-
66
-
ns
-
0.24 -
µC
BUK7628-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 â 26 April 2011
© NXP B.V. 2011. All rights reserved.
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