BUK7628-100A_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7628-100A
N-channel TrenchMOS standard level FET
10³
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I_DM
(A)
R_DS(on) = V_DS / I_D
10²
t_p = 1 μs
10 μs
D.C.
10
100 μs
1 ms
10 ms
100 ms
1
1
10
10²
10³
V_DS (V)
T_mb = 25 °C; I_DM is single pulse
Fig 3. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
120
WDSS
(%)
80
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40
0
20
60
100
140
180
T_(mb) (°C)
I_D = 75 A; unclamped inductive load
Fig 4. Normalised drain-source non-repetitive
avalanche energy rating; avalanche energy as a
function of mounting base temperature
10²
003aaf169
I_AV
(A)
10
25 °C
T_j prior to avalanche = 150 °C
Fig 5.
1
10^−3
10^−2
10^−1
1
10
t_AV (ms)
unclamped inductive load
Single-shot avalanche rating; avalanche current as a function of avalanche period
BUK7628-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 April 2011
© NXP B.V. 2011. All rights reserved.
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