BUK7611-55A_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
2.4
a
1.8
03aa28
1.2
0.6
0
−60
0
60
120
180
T_j (°C)
BUK7611-55A
N-channel TrenchMOS standard level FET
C ⁴⁵⁰⁰
(pF)
4000
C_iss
3500
C_oss
3000
2500
C_rss
2000
1500
1000
500
010_−2
10^−1
1
03nd25
10
10²
V_DS (V)
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 14. Input, output and reverse capacitances as a
function of drain-source voltage; typical values
140
I_S
(A)
120
100
80
60
40
20
0
0
03nd18
T_j = 175 °C
T_j = 25 °C
0.5
1.0
1.5
V_SD (V)
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
BUK7611-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 16 June 2010
© NXP B.V. 2010. All rights reserved.
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