BUK7611-55A_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7611-55A
N-channel TrenchMOS standard level FET
140
I_D
(A)
120
100
80
60
40
20
0
0
03nd21
T_j = 175 °C
T_j = 25 °C
2
4
6
8
V_GS (V)
10
V_GS
(V)
8
6
4
2
0
0
03nd19
V_DD = 14 V
V_DD = 44 V
20
40
60
80
Q_G (nC)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source voltage as a function of turn-on
function of gate-source voltage; typical values
gate charge; typical values
5
V_GS(th)
(V)
4
max
03aa32
22
R_DSon
(mΩ)
18
5.5 6 6.5 7
03nd24
8 V_GS (V) = 10
3
typ
14
2
min
10
1
0
−60
0
60
120
180
T_j (°C)
6
0
100
200
300
I_D (A)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
BUK7611-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 16 June 2010
© NXP B.V. 2010. All rights reserved.
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