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BUK7611-55A_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
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NXP Semiconductors
BUK7611-55A
N-channel TrenchMOS standard level FET
103
ID
(A)
102
RDSon = VDS / ID
10 P
δ = tp
T
tp
t
T
1
1
D.C.
10
03nd26
VDS (V)
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
see Figure 4
mounted on a printed-circuit board;
minimum footprint
Min Typ Max Unit
-
-
0.9 K/W
-
50
-
K/W
03nd27
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10−1 0.1
0.05
0.02
10−2
Single Shot
10−3
10−6
10−5
10−4
10−3
P
tp
δ=
T
10−2
tp
t
T
10−1
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7611-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 16 June 2010
© NXP B.V. 2010. All rights reserved.
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