BUK7611-55A_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7611-55A
N-channel TrenchMOS standard level FET
400
I_D
(A)
300
200
100
0
0
20
18
16
03nd23
14
12
V_GS (V) = 10
9.5
8.5
7.5
6.5
5.5
4.5
2
4
6
8
10
V_DS (V)
14
R_DSon
(mΩ)
12
10
8
6
5
03nd22
10
15
20
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state voltage as a function of
function of drain-source voltage; typical values
gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
03aa35
min typ max
50
g_fs
(S)
40
03nd20
10^−3
30
10^−4
20
10^−5
10
10^−6
0
2
4
6
V_GS (V)
0
0
20
40
60
80
100
I_D (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK7611-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 16 June 2010
© NXP B.V. 2010. All rights reserved.
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