|
BUK7611-55A_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
|
BUK7611-55A
N-channel TrenchMOS standard level FET
Rev. 02 â 16 June 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
ï® Low conduction losses due to low
on-state resistance
ï® Q101 compliant
ï® Suitable for standard level gate drive
sources
ï® Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
ï® 12 V and 24 V loads
ï® Automotive and general purpose
power switching
ï® Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ⥠25 °C; Tj ⤠175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 175 °C; see Figure 12;
see Figure 13
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 12;
see Figure 13
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
ID = 65 A; Vsup ⤠55 V;
RGS = 50 â¦; VGS = 10 V;
avalanche energy Tj(init) = 25 °C; unclamped
Min Typ Max Unit
-
-
55 V
-
-
75 A
-
-
166 W
-
-
22 mâ¦
-
9 11 mâ¦
-
-
211 mJ
|
▷ |