BUK7575-100A Datasheet, PDF (8/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7575-100A; BUK7675-100A
TrenchMOS™ standard level FET
35
ID
(A)
30
03nb29
25
20
15
Tj = 175 ^O C
10
Tj = 25 ^O C
5
0
0
2
4
6 _{VGS (V)} 8
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
10
VGS
(V) ₉
8
7
6
5
4
3
2
1
0
0
03nb27
VDS= 14 V
VDS= 80 V
10
20 QG (nC) 30
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
IS ⁴⁵
(A) ₄₀
03nb26
35
30
25
20
Tj = 175 ^O C
15
10
5
Tj = 25 ^OC
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (V)
V_GS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 07623
Product specification
Rev. 01 — 24 October 2000
© Philips Electronics N.V. 2000. All rights reserved.
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