|
BUK7575-100A Datasheet, PDF (5/15 Pages) NXP Semiconductors – TrenchMOS standard level FET | |||
|
◁ |
Philips Semiconductors
BUK7575-100A; BUK7675-100A
TrenchMOS⢠standard level FET
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise speciï¬ed
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown
ID = 0.25 mA; VGS = 0 V
voltage
Tj = 25 °C
100
â
â
V
Tj = â55 °C
89
â
â
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = â55 °C
VDS = 100 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 13 A;
Figure 7 and 8
2
3
4
V
1
â
â
V
â
â
4.4
V
â
0.05
10
µA
â
â
500
µA
â
2
100
nA
Dynamic characteristics
Tj = 25 °C
Tj = 175 °C
â
64
75
mâ¦
â
â
187
mâ¦
Ciss
input capacitance
VGS = 0 V; VDS = 25 V;
â
Coss
output capacitance
f = 1 MHz; Figure 12
â
Crss
reverse transfer capacitance
â
td(on)
tr
turn-on delay time
rise time
VDD = 30 V; RL = 2.2 â¦;
â
VGS = 10 V; RG = 5.6 â¦;
â
td(off)
turn-off delay time
â
tf
fall time
â
Ld
internal drain inductance
from drain lead 6 mm from
â
package to centre of die
907
1210
pF
127
150
pF
78
110
pF
8
â
ns
39
â
ns
26
â
ns
24
â
ns
4.5
â
nH
from contact screw on
â
3.5
â
nH
mounting base to centre of
die SOT78
from upper edge of drain
â
2.5
â
nH
mounting base to centre of
die SOT404
Ls
internal source inductance from source lead to source
â
7.5
â
nH
bond pad
9397 750 07623
Product speciï¬cation
Rev. 01 â 24 October 2000
© Philips Electronics N.V. 2000. All rights reserved.
5 of 15
|
▷ |