BUK7575-100A Datasheet, PDF (6/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7575-100A; BUK7675-100A
TrenchMOS™ standard level FET
Table 5: Characteristics…continued
T_j = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Source-drain diode
V_SD
source-drain (diode forward) I_S = 25 A; V_GS = 0 V;
−
voltage
Figure 15
t_rr
reverse recovery time
I_S = 13 A; dI_S/dt = −100 A/µs
−
Q_r
recovered charge
V_GS = −10 V; V_DS = 30 V
−
Typ
Max
Unit
0.85
1.2
V
64
−
ns
120
−
nC
60
ID
(A)
50
40
30
20
10
00
VGS (V) = 8
03nb31
9 ¹⁰
20
7.5
6.5
5.5
4.5
2
4
6
8
10
VDS (V)
RDSo9n0
(mΩ)
85
80
75
70
65
60
55
50
5
03nb30
10
15
20
VGS (V)
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 10 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
120
RDSon
(mΩ)
100
VGS (V)= 5.5
03nb32
6 6.5 ⁷ 8 ¹⁰
80
60
40
0
T_j = 25 °C
10
20
30
40
50
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
3
a _2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20
03aa29
60 100 140 180
Tj (oC)
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07623
Product specification
Rev. 01 — 24 October 2000
© Philips Electronics N.V. 2000. All rights reserved.
6 of 15