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BUK7575-100A Datasheet, PDF (2/15 Pages) NXP Semiconductors – TrenchMOS standard level FET | |||
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Philips Semiconductors
BUK7575-100A; BUK7675-100A
TrenchMOS⢠standard level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tmb = 25 °C; VGS = 10 V
Tmb = 25 °C
VGS = 10 V; ID = 13 A
Tj = 25 °C
Tj = 175 °C
Typ
Max Unit
â
100
V
â
23
A
â
99
W
â
175
°C
â
75
mâ¦
â
187
mâ¦
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max Unit
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 kâ¦
Tmb = 25 °C; VGS = 10 V;
Figure 2 and 3
â
100
V
â
100
V
â
±20
V
â
23
A
IDM
peak drain current
Tmb = 100 °C; VGS = 10 V; Figure 2
â
16.2 A
Tmb = 25 °C; pulsed; tp ⤠10 µs;
Figure 3
â
92
A
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
Tmb = 25 °C; Figure 1
â
99
W
â55
+175 °C
â55
+175 °C
Source-drain diode
IDR
IDRM
reverse drain current (DC)
pulsed reverse drain current
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp ⤠10 µs
â
23
A
â
92
A
Avalanche ruggedness
WDSS non-repetitive avalanche energy
unclamped inductive load; ID = 14 A;
â
VDS ⤠100 V; VGS = 10 V; RGS = 50 â¦;
starting Tmb = 25 °C
100
mJ
9397 750 07623
Product speciï¬cation
Rev. 01 â 24 October 2000
© Philips Electronics N.V. 2000. All rights reserved.
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