BUK7575-100A Datasheet, PDF (7/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7575-100A; BUK7675-100A
TrenchMOS™ standard level FET
03aa32
5
4.5
VGS(th)
(V) ⁴
3.5
max.
3
typ.
2.5
2
min
1.5
1
0.5
0
-60 -20
20
60 100 140 180
Tj (oC)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
10-1
ID
(A) _10-2
03aa35
10-3
10-4
min
typ
max
10-5
10-6
0
1
2
3
4
5
VGS (V)
T_j = 25 °C; V_DS = V_GS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
20
gfs
(S)
15
03nb28
10
5
0
0
10
20
30 _{ID (A)} 40
T_j = 25 °C; V_DS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
2000
C (pF)
1800
03nb33
1600
1400
1200
1000
Ciss
800
600
400
200
Coss
0
Crss
0.01
0.1
1
10 _VDS(V) 100
V_GS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 07623
Product specification
Rev. 01 — 24 October 2000
© Philips Electronics N.V. 2000. All rights reserved.
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