BUK109-50GS Datasheet, PDF (8/12 Pages) NXP Semiconductors – PowerMOS transistor TOPFET

Philips Semiconductors
PowerMOS transistor
TOPFET
Product specification
BUK109-50GS
IIS / mA
5
BUK109-50GS
4
3
PROTECTION LATCHED
2
RESET
1
NORMAL
0
0
2
4
6
8
10
12
14
VIS / V
Fig.18. Typical DC input characteristics, T_j = 25 ˚C.
I_ISL = f(V_IS); overload protection operated ⇒ I_D = 0 A
IS / A
120
BUK109-50GS
100
80
60
40
20
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
VSD / V
Fig.19. Typical reverse diode current, T_j = 25 ˚C.
I_S = f(V_SDS); conditions: V_IS = 0 V; t_p = 250 µs
VDD
RL
D
TOPFET
I
P
D.U.T.
RI
VIS
S
ID measure
0V
0R1
Fig.20. Test circuit for resistive load switching times.
RESISTIVE TURN-ON
VDS / V
10
td on
tr
5
BUK109-50GS
VIS / V
ID / A
90%
10%
10%
0
0
10
20
time / us
Fig.21. Typical switching waveforms, resistive load.
V_DD = 13 V; R_L = 2.1 Ω; R_I = 50 Ω, T_j = 25 ˚C.
RESISTIVE TURN-OFF
td off
10
90%
ID / A
5
90%
VIS / V
BUK109-50GS
VDS / V
tf
10%
0
0
10
20
30
40
50
time / us
Fig.22. Typical switching waveforms, resistive load.
V_DD = 13 V; R_L = 2.1 Ω; R_I = 50 Ω, T_j = 25 ˚C.
VDD = VCL
LD
t _{p : adjust for correct ID}
D
TOPFET
I
P
D.U.T.
RI
VIS
S
ID measure
0V
0R1
Fig.23. Test circuit for inductive load switching times.
June 1996
8
Rev 1.000