BUK109-50GS Datasheet, PDF (10/12 Pages) NXP Semiconductors – PowerMOS transistor TOPFET

Philips Semiconductors
PowerMOS transistor
TOPFET
Product specification
BUK109-50GS
Iisl normalised to 25 C
1.5
1
0.5
-60
-20
20
60
100
140
180
Tj / C
Fig.30. Normalised input current (protection latched).
I_ISL/I_ISL25 ˚C = f(T_j); V_IS = 10 V
VDDP(P) / V
50
BUK109-50GS
40
max
30
20
10
0
0
2
4
6
8
10
VIS / V
Fig.31. Maximum drain source supply voltage for
SC load protection. V_DDP(P) = f(V_IS); T_mb ≤ 150 ˚C
June 1996
10
Rev 1.000