BUK109-50GS Datasheet, PDF (5/12 Pages) NXP Semiconductors – PowerMOS transistor TOPFET

Philips Semiconductors
PowerMOS transistor
TOPFET
Product specification
BUK109-50GS
REVERSE DIODE CHARACTERISTICS
T_mb = 25 ˚C
SYMBOL PARAMETER
CONDITIONS
V_SDS
Forward voltage
t_rr
Reverse recovery time
I_S = 29 A; V_IS = 0 V; t_p = 300 µs
not applicable¹
MIN.
-
-
TYP. MAX. UNIT
1.0 1.5 V
-
-
-
ENVELOPE CHARACTERISTICS
SYMBOL PARAMETER
L_d
Internal drain inductance
L_s
Internal source inductance
CONDITIONS
Measured from upper edge of tab
to centre of die
Measured from source lead
soldering point to source bond pad
MIN. TYP. MAX. UNIT
-
2.5
-
nH
-
7.5
-
nH
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.2. Normalised limiting power dissipation.
P_D% = 100⋅P_D/P_D(25 ˚C) = f(T_mb)
ID & IDM / A
1000
BUK109-50GS
Overload protection characteristics not shown
100
RDS(ON) ^{= VDS/ID}
tp =
10 us
100 us
10
DC
1 ms
10 ms
100 ms
1
1
10
100
VDS / V
Fig.4. Safe operating area. T_mb = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.3. Normalised continuous drain current.
I_D% = 100⋅I_D/I_D(25 ˚C) = f(T_mb); conditions: V_IS = 5 V
Zth / (K/W)
10
BUK109-50GS
D=
1
0.5
0.2
0.1
0.1 0.05
0.02
P_D
tp
D=
tp
T
0
0.01
1E-07
1E-05
1E-03
t/s
T
t
1E-01
1E+01
Fig.5. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
1 The reverse diode of this type is not intended for applications requiring fast reverse recovery.
June 1996
5
Rev 1.000