BUK109-50GS Datasheet, PDF (7/12 Pages) NXP Semiconductors – PowerMOS transistor TOPFET

Philips Semiconductors
PowerMOS transistor
TOPFET
Product specification
BUK109-50GS
td sc / ms
100
BUK109-50GS
ID / A
30
BUK109-50GS
10
20
typ.
PDSM
1
10
0.1
0.1
1
10
PDS / kW
Fig.12. Typical overload protection characteristics.
t_{d sc} = f(P_DS); conditions: V_IS ≥ 5 V; T_j = 25 ˚C.
PDSM%
120
100
80
60
40
20
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tmb / C
Fig.13. Normalised limiting overload dissipation.
P_DSM% =100⋅P_DSM/P_DSM(25 ˚C) = f(T_mb)
Energy & Time
1
BUK109-50GS
Time / ms
0.5
Energy / J
Tj(TO)
0
-60 -20
20
60 100 140 180 220
Tmb / C
Fig.14. Typical overload protection characteristics.
Conditions: V_DD = 13 V; V_IS = 10 V; SC load = 30 mΩ
0
50
60
70
VIS / V
Fig.15. Typical clamping characteristics, 25 ˚C.
I_D = f(V_DS); conditions: V_IS = 0 V; t_p ≤ 50 µs
VIS(TO) / V
2
1
max.
typ.
min.
0
-60 -40 -20 0
20 40 60 80 100 120 140
Tj / C
Fig.16. Input threshold voltage.
V_IS(TO) = f(T_j); conditions: I_D = 1 mA; V_DS = 5 V
II / mA
1.0
BUK109-50GS
0.5
0
0
Fig.17.
2
4
6
8
10
12
14
VIS / V
Typical DC input characteristics, T_j = 25 ˚C.
I_IS = f(V_IS); normal operation
June 1996
7
Rev 1.000