BUK109-50GS Datasheet, PDF (6/12 Pages) NXP Semiconductors – PowerMOS transistor TOPFET

Philips Semiconductors
PowerMOS transistor
TOPFET
Product specification
BUK109-50GS
ID / A
100
11
10
9
BUK109-50GS
VIS / V
8
7
50
6
5
4
3
2
0
0
4
8
12 16 20 24 28 32
VDS / V
Fig.6. Typical output characteristics, T_j = 25 ˚C.
ID = f(V_DS); parameter V_IS; t_p = 250 µs & t_p < t_{d sc}
ID / A
100
BUK109-50GS
90
VIS = 10 V
80
70
8V
60
6V
50
40
4V
30
20
10
0
0
1
2
3
4
5
VDS / V
Fig.7. Typical on-state characteristics, T_j = 25 ˚C.
ID = f(V_DS); parameter V_IS; t_p = 250 µs
RDS(ON) / mOhm
VIS / V = 4
5
100
BUK109-50GS
6
7 8 9 10 11
50
0
0
20
40
60
80
100
ID / A
Fig.8. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_IS; t_p = 250 µs
ID / A
100
BUK109-50GS
50
0
0
2
4
6
8
10
12
VIS / V
Fig.9. Typical transfer characteristics, T_j = 25 ˚C.
I_D = f(V_IS) ; conditions: V_DS = 10 V; t_p = 250 µs
gfs / S
20
BUK109-50GS
15
10
5
0
0
20
40
60
80
100
ID / A
Fig.10. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D); conditions: V_DS = 10 V; t_p = 250 µs
a
1.5
Normalised RDS(ON) = f(Tj)
1.0
0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.11. Normalised drain-source on-state resistance.
a = R_DS(ON)/R_DS(ON)25 ˚C = f(T_j); I_D = 13 A; V_IS = 10 V
June 1996
6
Rev 1.000