BUJ302AX_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – NPN power transistor

NXP Semiconductors
10²
h_FE
10
003aaf991
V_CE = 3 V
T_j = 125 °C
T_j = 25 °C
BUJ302AX
NPN power transistor
V_IM
0
t_p
T
V_CC
R_L
R_B
DUT
001aab989
1
10^-2
10^-1
1
10
I_C (A)
Fig 12. DC current gain as a function of collector
current; typical values
I_C
90 %
Fig 13. Test circuit for resistive load switching
I_Con
90 %
I_B
t_on
10 %
t_r ≤ 30 ns
Fig 14. Switching times waveforms for resistive load
t_s
t_off
I_Bon
10 %
t
t_f
−I_Boff
t
001aab990
BUJ302AX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 28 March 2011
© NXP B.V. 2011. All rights reserved.
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