BUJ302AX_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – NPN power transistor

NXP Semiconductors
BUJ302AX
NPN power transistor
10
V_CEsat
(V)
1
10^-1
003aaf994
T_j = 125 °C
T_j = 25 °C
6
I_C
(A)
4
2
003aaf996
1.4 A
1.2 A
1.0 A
0.8 A
0.6 A
0.4 A
I_B = 0.2 A
10^-2
10^-2
10^-1
1
10
I_C (A)
0
0
2
4
6
8
10
V_CE (V)
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
1.2
V_BEsat
(V)
1.0
003aaf993
T_j = 25 °C
0.8
0.6
T_j = 125 °C
0.4
0.2
10^-2
10^-1
1
10
I_C (A)
Fig 9. Collector current as a function of
collector-emitter voltage; typical values
10²
h_FE
10
003aaf992
V_CE = 5 V
T_j = 125 °C
T_j = 25 °C
1
10^-2
10^-1
1
10
I_C (A)
Fig 10. Base-emitter saturation voltage as a function of Fig 11. DC current gain as a function of collector
collector current; typical values
current; typical values
BUJ302AX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 28 March 2011
© NXP B.V. 2011. All rights reserved.
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