BUJ302AX_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – NPN power transistor

BUJ302AX
NPN power transistor
Rev. 02 — 28 March 2011
Product data sheet
1. Product profile
1.1 General description
High-voltage, high-speed planar-passivated NPN power switching transistor in a
SOT186A (TO-220F) plastic package.
1.2 Features and benefits
„ Fast switching
„ High voltage capability
„ Isolated package
„ Low thermal resistance
1.3 Applications
„ DC-to-DC converters
„ High-frequency electronic lighting
ballast applications
„ Inverters
„ Motor control systems
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
I_C
collector current see Figure 1; see Figure 2;
see Figure 4
P_tot
total power
dissipation
T_h ≤ 25 °C; see Figure 3
V_CESM
collector-emitter
peak voltage
V_BE = 0 V
Static characteristics
h_FE
DC current gain
I_C = 0.1 A; V_CE = 5 V; T_h = 25 °C;
see Figure 11
I_C = 0.8 A; V_CE = 3 V; T_h = 25 °C;
see Figure 12
Min Typ Max Unit
-
-
4
A
-
-
26 W
-
-
1050 V
48 66 100
25 42 50