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BUJ302AX_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – NPN power transistor
NXP Semiconductors
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
B
base
C
collector
E
emitter
n.c.
isolated
Simplified outline
mb
BUJ302AX
NPN power transistor
Graphic symbol
C
B
E
sym123
3. Ordering information
123
SOT186A (TO-220F)
Table 3. Ordering information
Type number
Package
Name
BUJ302AX
TO-220F
4. Limiting values
Description
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
VEBO
collector-emitter peak voltage
collector-emitter voltage
collector current
peak collector current
base current
peak base current
total power dissipation
storage temperature
junction temperature
emitter-base voltage
VBE = 0 V
IB = 0 A
see Figure 1; see Figure 2; see Figure 4
DC
Th ≤ 25 °C; see Figure 3
IC = 0 A; IE = 2 A; tp < 10 ms
Min Max Unit
-
1050 V
-
400 V
-
4
A
-
8
A
-
2
A
-
4
A
-
26 W
-65 150 °C
-
150 °C
-
24 V
BUJ302AX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 28 March 2011
© NXP B.V. 2011. All rights reserved.
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