BFU510 Datasheet, PDF (8/16 Pages) NXP Semiconductors – NPN SiGe wideband transistor

Philips Semiconductors
NPN SiGe wideband transistor
Product specification
BFU510
handbook, full pagewidth
135°
90°
45°
1 GHz
1 GHz
10 mA
0.25 0.2 0.15 0.1 0.05
180°
0°
1 mA
10 GHz
−135°
−45°
I_C = 1 mA and 10 mA; V_CE = 2 V; Z_o = 50 Ω.
−90°
MLE146
Fig.12 Common emitter reverse transmission coefficient (s₁₂).
handbook, full pagewidth
90°
+1
135° _+0.5
1.0
+2 ^45°
0.8
0.6
180°
+0.2
10 GHz
10 GHz
0.2
0.5
0
0.4
+5
0.2
2
5
0° 0
−0.2
−0.5
−135°
I_C = 1 mA and 10 mA; V_CE = 2 V; Z_o = 50 Ω.
1 mA
10 mA
1 GHz
2.5 GHz
5 GHz
1 GHz
−5
2.5 GHz
5 GHz
−2
−45°
−1
MLE147
1.0
−90°
Fig.13 Common emitter output reflection coefficient (s₂₂).
2003 Jun 12
8