BFU510 Datasheet, PDF (7/16 Pages) NXP Semiconductors – NPN SiGe wideband transistor

Philips Semiconductors
NPN SiGe wideband transistor
Product specification
BFU510
handbook, full pagewidth
90°
1.0
+1
135°
10 GHz
+0.5
+2 ^45°
0.8
10 GHz
0.6
+0.2
0.2
0.5
180° 0
−0.2
5 GHz
−0.5
−135°
I_C = 1 mA and 10 mA; V_CE = 2 V; Z_o = 50 Ω.
0.4
+5
0.2
2
5
0° 0
5 GHz
10 mA
1 mA
1 GHz
2.5 GHz
1 G−H5z
−1
−90°
2.5 GHz
−2
−45°
MLE144
1.0
Fig.10 Common emitter input reflection coefficient (s₁₁).
handbook, full pagewidth
90°
135°
1 GHz
10
180°
10 mA
86
1 GHz
4
2
1 mA
10 GHz
45°
0°
−135°
−45°
I_C = 1 mA and 10 mA; V_CE = 2 V; Z_o = 50 Ω.
−90°
MLE145
Fig.11 Common emitter forward transmission coefficient (s₂₁).
2003 Jun 12
7