BFU510 Datasheet, PDF (2/16 Pages) NXP Semiconductors – NPN SiGe wideband transistor

Philips Semiconductors
NPN SiGe wideband transistor
Product specification
BFU510
FEATURES
• Very high power gain
• Very low noise figure
• High transition frequency
• Emitter is thermal lead
• Low feedback capacitance
• 45 GHz SiGe process.
PINNING
PIN
1
2
3
4
DESCRIPTION
emitter
base
emitter
collector
APPLICATIONS
• RF front end
• Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
• Radar detectors
• Pagers
• Satellite television tuners (SATV)
• High frequency oscillators.
DESCRIPTION
NPN SiGe wideband transistor for low voltage applications
in a plastic, 4-pin dual-emitter SOT343R package.
handbook, halfpage
3
4
2
Top view
1
MSB842
Marking code: A5.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V_CBO
V_CEO
I_C
P_tot
h_FE
G_max
NF
collector-base voltage open emitter
−
collector-emitter voltage open base
−
collector current (DC)
−
total power dissipation T_s ≤ 115 °C
−
DC current gain
I_C = 10 mA; V_CE = 2 V; T_j = 25 °C
70
maximum power gain I_C = 10 mA; V_CE = 2 V; f = 2 GHz; T_amb = 25 °C −
noise figure
I_C = 0.5 mA; V_CE = 2 V; f = 2 GHz; Γ_S = Γ_opt
−
−
9
V
−
2.3 V
10 15 mA
−
35 mW
140 210
23 −
dB
1
−
dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Jun 12
2