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BFU510 Datasheet, PDF (3/16 Pages) NXP Semiconductors – NPN SiGe wideband transistor | |||
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Philips Semiconductors
NPN SiGe wideband transistor
Product speciï¬cation
BFU510
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
CONDITIONS
open emitter
open base
open collector
Ts ⤠115 °C; note 1; see Fig.2
Note
1. Ts is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
MIN.
â
â
â
â
â
â65
â
MAX.
9
2.3
2.5
15
35
+150
150
UNIT
V
V
V
mA
mW
°C
°C
VALUE
1 000
UNIT
K/W
handbook,6h0alfpage
Ptot
(mW)
40
MLE136
20
0
0
40
80
120
160
Ts (°C)
Fig.2 Power derating curve.
2003 Jun 12
3
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