BFU510 Datasheet, PDF (5/16 Pages) NXP Semiconductors – NPN SiGe wideband transistor

Philips Semiconductors
NPN SiGe wideband transistor
Product specification
BFU510
handboo²k,⁵h⁰alfpage
hFE
200
150
100
50
0
0
5
MLE137
10
15
IC (mA)
V_CE = 2 V; T_j = 25 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
handbook,¹h⁶alfpage
IC
(mA)
12
8
4
MLE138
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
0
0
1
2
3
VCE (V)
(1) I_B = 180 µA.
(2) I_B = 160 µA.
(3) I_B = 140 µA.
(4) I_B = 120 µA.
(5) I_B = 100 µA.
(6) I_B = 80 µA.
(7) I_B = 60 µA.
(8) I_B = 40 µA.
(9) I_B = 20 µA.
Fig.4 Output characteristics; typical values.
40
handbook, halfpage
fT
(GHz)
30
MLE139
20
10
0
1
10
IC (mA)
V_CB = 1 V; f = 2 GHz; T_amb = 25 °C.
Fig.5 Transition frequency as a function of
collector current; typical values.
2003 Jun 12
40
handbook, halfpage
gain
(dB)
30
20
10
0
10²
MLE140
MSG
s21
Gmax
10³
10⁴
f (MHz)
I_C = 10 mA; V_CE = 2 V; T_amb = 25 °C.
Fig.6 Gain as a function of frequency; typical
values.
5