SI4884 Datasheet, PDF (7/12 Pages) NXP Semiconductors – TrenchMOS™ logic level FET

Philips Semiconductors
SI4884
TrenchMOS™ logic level FET
2.5
VGS(th)
(V)
2
1.5
1
max
typ
min
03aa33
10-1
ID
(A)
10-2
10-3
10-4
03aa36
min
typ
max
0.5
10-5
0
-60
0
60
120 _{Tj (oC)} 180
10-6
0
1
2
3
VGS (V)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
T_j = 25 °C; V_DS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
104
C
(pF)
003aaa165
20
IS
(A)
16
003aaa166
103
102
10-1
1
Ciss
Coss
Crss
10 _{VDS (V) 102}
12
8
4
0
0.4
150 ^οC
0.6
25 ^οC
0.8
1
VSD (V)
V_GS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
T_j = 25 °C and 150 °C; V_GS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
9397 750 09582
Product data
Rev. 02 — 12 April 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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