SI4884 Datasheet, PDF (6/12 Pages) NXP Semiconductors – TrenchMOS™ logic level FET

Philips Semiconductors
SI4884
TrenchMOS™ logic level FET
16 _{5 V}
ID
(A)
4V
12
003aaa162
2.8 V
8
2.5 V
4
VGS = 2.2 V
0
0
0.4
0.8
1.2
1.6
2.0
VDS (V)
20
ID
(A)
16
12
8
4
0
0
003aaa163
150 ^οC
25 ^οC
1
2
3
4
VGS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 150 °C; V_DS > I_D × R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
200
003aaa164
2
RDSon
a
(mΩ)
2.2 V
VGS = 2.5 V
1.6
160
03aa27
120
1.2
80
5V
40
4V
0
0
4
8
12
16
ID (A)
0.8
0.4
0
-60
0
60
120 _{Tj (oC)} 180
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a= -_R---_D----^R_S---_o-^D--_n-^S-₍--_2o--₅-ⁿ--_°--_C----₎
Fig 8. Normalized drain source on-state resistance
factor as a function of junction temperature.
9397 750 09582
Product data
Rev. 02 — 12 April 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
6 of 12