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SI4884 Datasheet, PDF (5/12 Pages) NXP Semiconductors – TrenchMOS™ logic level FET
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Philips Semiconductors
SI4884
TrenchMOS™ logic level FET
5. Characteristics
Table 4: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VGS = 0 V
ID = 250 µA; VDS = VGS; Figure 9
VDS = 24 V; VGS = 0 V
Tj = 25 °C
Tj = 100 °C
VGS = ±20 V; VDS = 0 V
VGS = 4.5 V; ID = 10 A; Figure 7 and 8
VGS = 10 V; ID = 12 A;
gfs
forward transconductance
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain (reverse) diode
VDS = 15 V; ID = 10 A;
ID = 15 A; VDD = 16 V; VGS = 5 V; Figure 13
VGS = 0 V; VDS = 16 V; f = 1 MHz; Figure 11
VDD = 16 V; RD = 10 Ω; VGS = 10 V
VSD
source-drain (diode forward) voltage IS = 1 A; VGS = 0 V; Figure 12
trr
reverse recovery time
IS = 2.3 A; dIS/dt = −100 A/µs; VGS = 0 V
Min Typ Max Unit
30 -
1-
-
V
2V
-
-
1 µA
-
-
5 µA
-
100 nA
-
11 16.5 mΩ
-
8.9 10.5 mΩ
-
34 -
S
-
17.6 -
nC
-
4-
nC
-
4.4 -
nC
-
1335 -
pF
-
391 -
pF
-
190 -
pF
-
10.6 -
ns
-
11.7 -
ns
-
37 -
ns
-
19 -
ns
-
0.7 1.0 V
-
70 -
ns
9397 750 09582
Product data
Rev. 02 — 12 April 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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